BAS32L

Features: · Small hermetically sealed glass SMD package· High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V· Repetitive peak reverse voltage: max. 75 V· Repetitive peak forward current: max. 450 mAApplication· High-speed switching· Fast logic applications.Specifications S...

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SeekIC No. : 004296217 Detail

BAS32L: Features: · Small hermetically sealed glass SMD package· High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V· Repetitive peak reverse voltage: max. 75 V· Repetitive peak forward ...

floor Price/Ceiling Price

Part Number:
BAS32L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Small hermetically sealed glass SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 75 V
· Repetitive peak forward current: max. 450 mA





Application

· High-speed switching
· Fast logic applications.





Specifications

Symbol Parameter Conditions Min Max Unit
VR continuous reverse voltage - 75 V
VRRM repetitive peak reverse voltage - 75 V
IF continuous forward current see Fig.2; note 1 - 200 mA
IFRM repetitive peak forward current - 450 mA
IFSM non-repetitive peak forward curren square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 s
t = 1 ms
t = 1 s


-
-
-


4
1
0.5


A
A
A
Ptot total power dissipation Tamb = 25 °C; note 1 - 500 mW
Tstg storage temperature - +200
Tj junction temperature -65 200
Note
1. Device mounted on an FR4 printed-circuit board.





Description

The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package.



The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package.It has five unique features: (1): small hermetically sealed glass SMD package; (2): high switching speed: max. 4 ns; (3): continuous reverse voltage is max.75 V; (4): repetitive peak reverse voltage is max.75 V; (5): repetitive peak forward current is max.450 mA.

There are some limiting values about it. (1): repetitive peak reverse voltage(VRRM) is 75 V max; (2): continuous reverse voltage(VR) is 75 V max; (3): continuous forward current(IF) is 200 mA max; (4): repetitive peak forward current(IFRM) is 450 mA; (5): non-repetitive peak forward current(IFSM;square wave; Tj = 25 °C prior to surge) is 4 A max when t is 1 ms or is 0.5 A max when t is 1 s; (6): total power dissipation(Ptot,Tamb = 25 °C) is 500 mW max; (7): storage temperature(Tstg) is -65°C to +200°C; (8): junction temperature(Tj) is 200°C max.

In a word, this is just a simple introduction,if you want to know more about it, please pay more attention to our web!Thanks for your concern!






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