Features: · Small hermetically sealed glass SMD package· High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V· Repetitive peak reverse voltage: max. 75 V· Repetitive peak forward current: max. 450 mAApplication· High-speed switching· Fast logic applications.Specifications S...
BAS32L: Features: · Small hermetically sealed glass SMD package· High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V· Repetitive peak reverse voltage: max. 75 V· Repetitive peak forward ...
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Symbol | Parameter | Conditions | Min | Max | Unit |
VR | continuous reverse voltage | - | 75 | V | |
VRRM | repetitive peak reverse voltage | - | 75 | V | |
IF | continuous forward current | see Fig.2; note 1 | - | 200 | mA |
IFRM | repetitive peak forward current | - | 450 | mA | |
IFSM | non-repetitive peak forward curren | square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 s t = 1 ms t = 1 s |
- - - |
4 1 0.5 |
A A A |
Ptot | total power dissipation | Tamb = 25 °C; note 1 | - | 500 | mW |
Tstg | storage temperature | - | +200 | ||
Tj | junction temperature | -65 | 200 |
The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package.
The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package.It has five unique features: (1): small hermetically sealed glass SMD package; (2): high switching speed: max. 4 ns; (3): continuous reverse voltage is max.75 V; (4): repetitive peak reverse voltage is max.75 V; (5): repetitive peak forward current is max.450 mA.
There are some limiting values about it. (1): repetitive peak reverse voltage(VRRM) is 75 V max; (2): continuous reverse voltage(VR) is 75 V max; (3): continuous forward current(IF) is 200 mA max; (4): repetitive peak forward current(IFRM) is 450 mA; (5): non-repetitive peak forward current(IFSM;square wave; Tj = 25 °C prior to surge) is 4 A max when t is 1 ms or is 0.5 A max when t is 1 s; (6): total power dissipation(Ptot,Tamb = 25 °C) is 500 mW max; (7): storage temperature(Tstg) is -65°C to +200°C; (8): junction temperature(Tj) is 200°C max.
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