Features: · For high-speed switching applications· High breakdown voltageSpecifications Parameter Symbol Value Unit Diode reverse voltage VR 200 V Peak reverse voltage VRM 250 Forward current IF 250 mA Peak forward current IFM 625 Surge fo...
BAS21U: Features: · For high-speed switching applications· High breakdown voltageSpecifications Parameter Symbol Value Unit Diode reverse voltage VR 200 V Peak reverse voltage ...
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Parameter |
Symbol |
Value |
Unit |
Diode reverse voltage |
VR |
200 |
V |
Peak reverse voltage |
VRM |
250 | |
Forward current |
IF |
250 |
mA |
Peak forward current |
IFM |
625 | |
Surge forward current,t = 10s |
IFS |
4 |
A |
Total power dissipation BAS21, TS 70 BAS21-03W, TS 124 BAS21U, TS 122 |
Ptot |
350 250 250 |
mW |
Junction temperature |
Tj |
150 |
|
Storage temperature |
Tstg |
-65 ... 150 |
The BAS21U is the silicon switching diode which has two unique features:(1)for high-speed switching applications;(2)high breakdown voltage.
There are also some characteristics about BAS21U when Tj is 25°C unless otherwise specified.(1):diode reverse voltage(VR) is 200 V;(2):peak reverse voltage(VRM) is 250;(3):forward current(IF) is 250 mA;(4):peak forward current(IFM) is 625;(5):surge forward current, t = 10 s (IFS) is 4 A;(6):junction temperature Tj 150 °C;(7):storage temperature (Tstg) is -65°C to 150°C.
Besides,there are also some electrical characteristics about BAS21U at Ta is 25°C,unless otherwise specified.DC characteristics:(1):breakdown voltage(V(BR)) is 250 V min when I(BR) is 100 uA;(2): reverse current(IR) is 0.1 uA max when VR is 200 V or is 100 uA max when VR is 200 V and Ta is 150°C;(3):forward voltage(VF) is 1 V when IF is 100 mA or is 1.25 V max when IF is 200 mA.AC characteristics:(1): diode capacitance(CT) is 5 pF max when VR is 0 V and f is 1 MHz;(2):reverse recovery time(trr) is 50 ns max when IF is 30 mA,IR is 30 mA, measured at IR is 3 mA and PL is 100 ohms.