Features: · Small ceramic SMD package· High switching speed: max. 4 ns· Continuous reverse voltage: max. 75 V· Repetitive peak reverse voltage: max. 85 V· Repetitive peak forward current: max. 500 mA. Application· High-speed switching in e.g.surface mounted circuits.Specifications Symbol Par...
BAS216: Features: · Small ceramic SMD package· High switching speed: max. 4 ns· Continuous reverse voltage: max. 75 V· Repetitive peak reverse voltage: max. 85 V· Repetitive peak forward current: max. 500 m...
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Symbol | Parameter | Conditions | Min | Max | Unit |
VRRM | repetitive peak reverse voltage | - | 85 | V | |
VR | continuous reverse voltage | - | 75 | V | |
IF | continuous forward current | note 1 | - | 250 | mA |
IFRM | repetitive peak forward current | - | 500 | mA | |
IFSM | non-repetitive peak forward curren | square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 s t = 1 ms t = 1 s |
- - - |
4 1 0.5 |
A A A |
Ptot | total power dissipation | Tamb = 25 °C;see Fig.2; note 1 | - | 400 | mW |
Tstg | storage temperature | - | +150 | ||
Tj | junction temperature | -65 | 150 |
The BAS216 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular ceramic SMD SOD110 package.