SpecificationsDescriptionThe BAS16SE6327 is designed as one kind of high-speed switching diode that belongs to the BAS16S family. This device is fabricated in planar technology, and encapsulated in a small SOT-323 plastic SMD package. So it can be used in high-speed switching in hybrid thick and t...
BAS16SE6327: SpecificationsDescriptionThe BAS16SE6327 is designed as one kind of high-speed switching diode that belongs to the BAS16S family. This device is fabricated in planar technology, and encapsulated in ...
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Diodes (General Purpose, Power, Switching) Diode Switching 300V 0.2A 3-Pin
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Diodes (General Purpose, Power, Switching) Diode Switching 600V 0.1A 3-Pin
The BAS16SE6327 is designed as one kind of high-speed switching diode that belongs to the BAS16S family. This device is fabricated in planar technology, and encapsulated in a small SOT-323 plastic SMD package. So it can be used in high-speed switching in hybrid thick and thin-film circuits applications.
Features of the BAS16SE6327 are:(1)Small plastic SMD package; (2)High switching speed: max. 4ns; (3)Continuous reverse voltage: max. 75V; (4)Repetitive peak reverse voltage: max. 85V; (5)Repetitive peak forward current: max. 500mA.
The absolute maximum ratings of the BAS16SE6327 can be summarized as:(1)Repetitive peak reverse voltage: 85 V;(2)Continuous reverse voltage: 75 V;(3)Continuous forward current: 215 mA;(4)Repetitive peak forward current: 500 mA;(5)Total power dissipation: 250 mW;(6)Junction Temperature: 150 °C;(7)Storage Temperature: -65 to +150 °C.
The electrical characteristics of this device can be summarized as:(1)Forward voltage: 0.715 V to 1.25 V;(2)Reverse current: 30 to 50 uA;(3)Diode capacitance: 1.5 pF;(4)Reverse recovery time: 4 ns;(5)Forward recovery voltage: 1.75 V;(6)thermal resistance from junction to tie-point: 360 /W;(7)thermal resistance from junction to ambient: 500 /W. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .