Features: • High reverse Voltage• Small reverse capacitance• High breakdown voltageApplication· For frequency up to 3 GHz· RF-signal tuning· Signal attenuator and switches· Mobile , wireless and TV-ApplicationsPinoutSpecifications Parameter Test condition Symbol Value...
BAR64V-04: Features: • High reverse Voltage• Small reverse capacitance• High breakdown voltageApplication· For frequency up to 3 GHz· RF-signal tuning· Signal attenuator and switches· Mobile ...
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Parameter | Test condition |
Symbol |
Value |
Unit |
Reverse voltage |
VR |
100 |
V | |
Forward current |
IF |
100 |
mA | |
Junction temperature |
Tj |
150 |
||
Storage temperature range |
Tstg |
- 55 to + 150 |
Characterized by low reverse Capacitance the PIN iodes BAR64V-04 was designed for RF signal witching and tuning. As a function of the forward ias current the forward resistance (rf) can be djusted over a wide range. A long carrier life time ffers low signal distortion for signals over 10 MHz up o 3 GHz. Typical applications for this PIN Diodes are witches and attenuators in wireless, mobile and TVsystems.