Features: • Low forward resistance• Very small reverse capacitanceApplicationFor frequency up to 3 GHzRF-signal tuningMobile , wireless and TV-ApplicationsSpecifications Parameter Test condition Symbol Value Unit Reverse voltage VR 50 V Forward current IF 150 m...
BAR63V-04W: Features: • Low forward resistance• Very small reverse capacitanceApplicationFor frequency up to 3 GHzRF-signal tuningMobile , wireless and TV-ApplicationsSpecifications Parameter ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Test condition | Symbol | Value | Unit |
Reverse voltage | VR | 50 | V | |
Forward current | IF | 150 | mA | |
Junction temperature | Tj | 150 | °C | |
Storage temperature range | Tstg | -55 to +150 | °C |
Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diodes are wireless, mobile and TV-systems.