Features: · High speed switching for RF signals· Low diode capacitance· Low diode forward resistance· Low series inductance· For applications up to 3 GHz.Application· RF attenuators and switches.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR c...
BAP63-05W: Features: · High speed switching for RF signals· Low diode capacitance· Low diode forward resistance· Low series inductance· For applications up to 3 GHz.Application· RF attenuators and switches.Pin...
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SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per diode | |||||
VR | continuous reverse voltage |
- |
50 |
V | |
IF | continuous forward current |
- |
50 |
mA | |
Ptot | total power dissipation |
TS 90 |
- |
240 |
mW |
Tstg | storage temperature |
-65 |
+150 |
||
Tj | junction temperature |
-65 |
+150 |