Features: · High speed switching for RF signals · Very low series inductance· Low diode capacitance · For applications up to 3 GHz· Low forward resistanceApplication· RF attenuators and switchesPinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reve...
BAP55L: Features: · High speed switching for RF signals · Very low series inductance· Low diode capacitance · For applications up to 3 GHz· Low forward resistanceApplication· RF attenuators and switchesPino...
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· High speed switching for RF signals
· Very low series inductance
· Low diode capacitance
· For applications up to 3 GHz
· Low forward resistance
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VR | continuous reverse voltage |
- |
50 |
V | |
IF | continuous forward current |
- |
100 |
mA | |
Ptot | total power dissipation |
TS = 90 |
- |
500 |
mW |
Tstg | storage temperature |
-65 |
+150 |
||
Tj | junction temperature |
-65 |
+150 |