Features: · High speed switching for RF signals· Low diode capacitance· Low forward resistance· Very low series inductance· For applications up to 3 GHzApplication· RF attenuators and switchesPinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR reverse voltage ...
BAP51L: Features: · High speed switching for RF signals· Low diode capacitance· Low forward resistance· Very low series inductance· For applications up to 3 GHzApplication· RF attenuators and switchesPinout...
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SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VR | reverse voltage |
- |
60 |
V | |
IF | forward current |
- |
100 |
mA | |
Ptot | total power dissipation |
TSP = 90 |
- |
500 |
mW |
Tstg | storage temperature |
-65 |
+150 |
||
Tj | junction temperature |
-65 |
+150 |