Features: · Low diode capacitance· Low diode forward resistance.Application· General RF applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage 60 V I F continuous forward current 50 mA P tot total power dissipation T...
BAP5102: Features: · Low diode capacitance· Low diode forward resistance.Application· General RF applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse vo...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
V R | continuous reverse voltage | 60 | V | ||
I F | continuous forward current | 50 | mA | ||
P tot | total power dissipation | T s =90°C | 715 | mW | |
T stg | storage temperature | -65 | +150 | °C | |
T j | junction temperature | -65 | +150 | °C |