Features: · Two elements in common cathode configuration in a small-sized plastic SMD package· Low diode capacitance· Low diode forward resistance.Application· General RF applications.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage - ...
BAP50-05W: Features: · Two elements in common cathode configuration in a small-sized plastic SMD package· Low diode capacitance· Low diode forward resistance.Application· General RF applications.PinoutSpecific...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VR | continuous reverse voltage | - | 50 | V | |
IF | continuous forward current | - | 50 | mA | |
IFSM | total power dissipation | Ts= 90 °C | - | 240 | mW |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | -65 | +150 | °C |
BAP50-05W Two planar PIN diodes in common cathode configuration in a SOT323 small SMD plastic package.It has many unique features: The frist one is two elements in common cathode configuration in a small-sized plastic SMD package.The second one is Low diode capacitance.The third one is Low diode forward resistance.And it can be applied to general RF applications.
There are some limiting values of BAP50-05W:continuous reverse voltage(VR) is 50 V max.continuous forward current(IF) is 50 mA max.Total power dissipation(Ptot,Ts = 90°C) is 240 mW max.storage temperature(Tstg) is −65°Cmin and +150°C max.junction temperature(Tj) is −65°C min and +150°C max.Otherwise,there are also some electrical characteristics:Forward voltage(VF) is 0.95 V min and 1.1 V typ when IF is 50 mA.Reverse leakage current(IR) is 100 nA max when VR is 50 V.Diode capacitance(Cd) is 0.45 pF typ when IF is 0 mA,f is 1MHz.Series inductance (Ls) is 1.6 nH typ when If is 100 mA and f is 100 MHz.
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