Features: • High speed switching for RF signals• Low diode capacitance• Low diode forward resistance• Very low series inductance• For applications up to 4 GHz.Application• RF attenuators and switches.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. ...
BAP27-01: Features: • High speed switching for RF signals• Low diode capacitance• Low diode forward resistance• Very low series inductance• For applications up to 4 GHz.Applicati...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VR | continuous reverse voltage | - | 50 | V | |
IF | continuous forward current | - | 100 | mA | |
IFSM | total power dissipation | Ts= 90 °C | - | 315 | mW |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | -65 | +150 | °C |