Features: SpecificationsDescriptionBAL0102-150 is a kind of silicon NPN high power VHF transistor.It is designed for wideband push-pull power amplifiers required in AM or FM communication equipment (100-200 MHz frequency range).The output power is 200 Watt.The requency range is from 100 to 200 MHz...
BAL0102-150: Features: SpecificationsDescriptionBAL0102-150 is a kind of silicon NPN high power VHF transistor.It is designed for wideband push-pull power amplifiers required in AM or FM communication equipment ...
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BAL0102-150 is a kind of silicon NPN high power VHF transistor.It is designed for wideband push-pull power amplifiers required in AM or FM communication equipment (100-200 MHz frequency range).The output power is 200 Watt.The requency range is from 100 to 200 MHz.The voltage is 28 V.The package type is SOT-161 (8 Lead).
What comes next is the absolute maximum ratings of BAL0102-150 (TCASE=25).The VCER (collector-emittor voltage,REB=10 ) is 50 V.The VEBO (emitter-base voltage) is 4 V.The IC (continuous collector current) is 18 A.The PC (collector power dissipation) is 180 W.The Tj (junction temperature) is 160.The Rth(j-c) (junction-case thermal resistance) is 0.6/W.
The following is the electrical characteristics of BAL0102-150 (TCASE=25).The minimum POUT is 200 W at fo=175 MHz,VCC=28 V,PIN=36.4 W.The minimum GD is 7.5 dB at fo=175 MHz,VCC=28 V,POUT=200 W.The minimum C is 60% at fo=175 MHz,VCC=28 V,POUT=200 W.