BA891

Features: · Ultra small plastic SMD package· Low diode capacitance: max. 1.05 pF· Low diode forward resistance: max. 0.7 Ω· Small inductance.Application· Low loss band-switching in VHF television tuners· Surface mount band-switching circuits.DescriptionThe BA891 is a planar, high performance...

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SeekIC No. : 004295922 Detail

BA891: Features: · Ultra small plastic SMD package· Low diode capacitance: max. 1.05 pF· Low diode forward resistance: max. 0.7 Ω· Small inductance.Application· Low loss band-switching in VHF televis...

floor Price/Ceiling Price

Part Number:
BA891
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Description



Features:

· Ultra small plastic SMD package
· Low diode capacitance: max. 1.05 pF
· Low diode forward resistance: max. 0.7 Ω
· Small inductance.





Application

· Low loss band-switching in VHF television tuners
· Surface mount band-switching circuits.





Description

The BA891 is a planar, high performance band-switching diode in the ultra small SOD523 SMD plastic package.



The BA891 is a planar, high performance band-switching diode in the ultra small SOD523 SMD plastic package.It has four unique features: (1) ultra small plastic SMD package; (2) low diode capacitance is max. 1.05 pF; (3) low diode forward resistance is max.0.7 W; (4) small inductance.And it can be used in low loss band-switching in VHF television tuners and surface mount band-switching circuits.

There are some limiting values. (1): continuous reverse voltage(VR) is 35 V max; (2): continuous forward current(IF) is 100 mA max; (3): total power dissipation(Ptot,Ts = 90 °C) is 715 mW max; (4): storage temperature(Tstg) is -65°C to +150°C; (5): junction temperature(Tj) is -65°C to +150°C.

Otherwise,there are also some electrical charateristics when Tj is 25°C,unless otherwise specified. (1): forward voltage(VF) is 1 V max when IF is 10 mA ; (2): reverse current(IR) is 20 nA max when VR is 30 V; (3): diode capacitance(Cd) is 0.8 pF typ and 1.05 pF max when f is 1 MHz and Vr is 1 V; (4): diode forward resistance(rD) is 0.45 ohm typand 0.7 ohm max when f is 100 MHz and IF is 3 mA; (5): series inductance(LS) is 0.6 nH typ.








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