BA281

BA281 is a kind of silicon planar epitaxial diode in DO-35 envelope intended for use in ratio detector circuits.Due to small spreads of forward voltage at low currents and of junction capacitance,the diodes can be used as matched pairs.

What comes next is about the BA281 ratings (limiting values in accordance with the absolute maximum system (IEC 134)).The maximum V_R (continuous reverse voltage) is 20 V.The maximum I_F (forward current,dc) is 200 mA.The maximum I_FRM (repetitive peak forward current) is 450 mA.The T_stg (storage temperature) is from -65 to +200.The maximum T_j (junction temperature) is 200.The R_thj-a (thermal resistance from junction to ambient in free air) is 0.6 K/mW.

The following is about the BA281 characteristics (T_j=25).The V_F (forward voltage) is from 360 to 420 mV at I_F=10A and is < 1000 mV at I_F=100 mA.The I_R (reverse current) is < 50 nA at V_R=50 V.The C_d (diode capacitance) is < 1.2 pF at f=1 MHz,V_R=0 V.Then is about the dynamic characteristics.The V_im (input peak voltage) is 3 V.The f_j (frequency) is 10.7 MHz.The C_L (load capacitance) is 330 pF.The R_L (load resistor) is 0.033 M.The (efficiency) is 85%.The r_D (diode resistance) is 12 k.