BA1L3M

Features: • On-chip bias resistor (R = 4.7 k, R = 4.7 k)• Complementary transistor with BN1L3MSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 10 V Collector Curren...

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SeekIC No. : 004295426 Detail

BA1L3M: Features: • On-chip bias resistor (R = 4.7 k, R = 4.7 k)• Complementary transistor with BN1L3MSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 ...

floor Price/Ceiling Price

Part Number:
BA1L3M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/12

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Product Details

Description



Features:

• On-chip bias resistor
  (R = 4.7 k, R = 4.7 k)
• Complementary transistor with BN1L3M



Specifications

Parameter Symbol Ratings Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 10 V
Collector Current (DC) IC(DC) 100 mA
Collector current (Pulse) Lc(Pulse) 200 mA
Total power dissipation PT 250 mW
Junction temperature tj 150 °C
Storage temperature TSTG −55 to +150 °C
* PW 10 ms, duty cycle 50 %


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