Features: • On-chip bias resistor (R = 4.7 k, R = 4.7 k)• Complementary transistor with BN1L3MSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 10 V Collector Curren...
BA1L3M: Features: • On-chip bias resistor (R = 4.7 k, R = 4.7 k)• Complementary transistor with BN1L3MSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 ...
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Parameter | Symbol | Ratings | Unit |
Collector-Base Voltage | VCBO | 60 | V |
Collector-Emitter Voltage | VCEO | 50 | V |
Emitter-Base Voltage | VEBO | 10 | V |
Collector Current (DC) | IC(DC) | 100 | mA |
Collector current (Pulse) | Lc(Pulse) | 200 | mA |
Total power dissipation | PT | 250 | mW |
Junction temperature | tj | 150 | °C |
Storage temperature | TSTG | −55 to +150 | °C |