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B9D0N50P1

Features: VDSS(Min.)= 500V, ID= 9ADrain-Source ON Resistance :RDS(ON)=0.8 @VGS =10VQg(typ.) =34.6nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5N20F2 Drain-Source VoltageGate-Source Voltage VDSSVGSS 250±30 VV Drain Current @Tc=...

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SeekIC No. : 004295362 Detail

B9D0N50P1: Features: VDSS(Min.)= 500V, ID= 9ADrain-Source ON Resistance :RDS(ON)=0.8 @VGS =10VQg(typ.) =34.6nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D...

B9D0N50P1 Data Sheet

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Part Number:
B9D0N50P1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

VDSS(Min.)= 500V, ID= 9A
Drain-Source ON Resistance :
RDS(ON)=0.8 @VGS =10V
Qg(typ.) =34.6nC


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB9D5N20P1
KHB9D5N20F1
KHB9D5N20F2
Drain-Source Voltage

Gate-Source Voltage
VDSS

VGSS
250

±30
V

V
Drain Current @Tc=25
@Tc=100

Pulsed(Note1)
ID

IDP
9
5.4

36
 9*
5.4*

36*
A
Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)
EAS

EAR

dv/dt
360

13.5

4.5
mJ

mJ

V/ns
Drain Power
Dissipation		 Ta=25
Derate above25
PD
135
1.07
44
0.35
W
W/
Maximum Junction Temperature

Storage Temperature Range
Tj

Tstg
150

-55 150


Thermal Characteristics
Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to- Ambient
RthJC

RthCS

RthJA
0.93

0.5

62.5
2.86

-

62.5
/W

/W

/W

* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET B9D0N50P1  has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.




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