B5S16862

Features:

` HIGH SPEED: t<sub>PD</sub> = 0.25ns (MAX.) at V<sub>CC</sub> = 4.5V TA=85
` ON RESISTANCE BETWEEN TWO PORT: 5 (TYP) at V_CC = 5.0V T_A=25
` LOW POWER DISSIPATION: I<sub>CC</sub> = 1uA(MAX.) at T<sub>A</sub>=25
` COMPATIBLE WITH TTL OUTPUTS: V_IH=2V(MIN), V_IL=0.8V(MAX)
` POWER DOWN PROTECTION ON INPUTS AND OUTPUTS
` OPERATING VOLTAGE RANGE: V_CC(OPR) = 4V to 5.5V
` PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 16862
` IMPROVED LATCH-UP IMMUNITY
` ESD PERFORMANCE:
    HBM > 2000V (MIL STD 883 method 3015);
    MM > 200V


Pinout




Specifications

Symbol	Parameter2	Value	Unit
VCC	Supply Voltage	-0.5 to +7.0	V
VI	DC Switch and Control Pin Voltage	-0.5 to +7.0	V
VO	DC Output Voltage (VCC = 0V) (note 1)	-0.5 to +7.0	V
VO	DC Output Voltage (VI/O=Gnd)	-0.5 to +7.0	V
IIK	DC Input Diode Current (VI/O < 0V)	-50	mA
IOK	DC Output Diode Current (note 2)	-50	mA
IO	DC Output Current (note 3)	128	mA
ICC or IGND	DC VCC or Ground Current per Supply Pin	±100	mA
Tstg	Storage Temperature	-65 to +150
TL	Lead Temperature (10 sec)	300

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional
operation under these conditions is not implied

1) I_O absolute maximum rating must be observed
2) V_O < GND,V_O > V_CC
3) Not more than one output should be tested at one time. Duration of the test should not exceed one second.


Description

The B5S16862 is an advanced high-speed CMOS 20-BIT TWO PORT BUS SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C²MOS tecnology.

It is ideal for 4V to 5.5V V_CC operations and ultra-low power and low noise applications, typically notebook and docking station.

Any nG output control governs four 5-bit BUS SWITCHES. Output Enable inputs (nG) tied together gives full 20-bit operations. When nG is LOW, the switches are on. When nG is HIGH, the switches are in high impedance state.

It has ultra high-speed performance at 5V near zero delay with low ON resistance.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.