Features: S uper high dense cell design for extremely low R DS (ON).High power and current handling capability.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 20 V Gate-S ource Voltage VGS ±12 V Drain Current-Continuous @ TJ=125 -...
B55N02: Features: S uper high dense cell design for extremely low R DS (ON).High power and current handling capability.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-S o...
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Parameter | Symbol | Limit | Unit |
Drain-S ource Voltage | VDS | 20 | V |
Gate-S ource Voltage | VGS | ±12 | V |
Drain Current-Continuous @ TJ=125 -Pulseda | ID | 23 | A |
IDM | 57 | A | |
Drain-S ource Diode Forward Current | IS | 55 | A |
Maximum Power Dissipation @ Tc=25 | PD | 75 | W |
Operating and S torage Temperature R ange | TJ , TS TG | -65 to 175 | |
THE RMAL CHAR ACTE R IS TICS | |||
Thermal R esistance, Junction-to-Case | R JC | 2 | /W |
Thermal R esistance, Junction-to-Ambient | R JA | 62.5 | /W |