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B12V105

Features: • High Gain Bandwidth Product ft = 10 GHz typ @ IC = 10 mA• Low Noise Figure1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz• High Gain |S21|2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz• Dice, Plastic, Hermetic and Surface Mount packages availableApplicationFor use in low noise app...

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SeekIC No. : 004293735 Detail

B12V105: Features: • High Gain Bandwidth Product ft = 10 GHz typ @ IC = 10 mA• Low Noise Figure1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz• High Gain |S21|2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz...

B12V105 Data Sheet

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Part Number:
B12V105
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• High Gain Bandwidth Product
    ft = 10 GHz typ @ IC = 10 mA
• Low Noise Figure
    1.6 dB typ at 1 GHz
    2.0 dB typ at 2 GHz
• High Gain
    |S21|2 = 18.1 dB @ 1 GHz
                  12.8 dB @ 2 GHz
• Dice, Plastic, Hermetic and Surface Mount packages available


Application

For use in low noise application at VHF,UHF and microwave frequencies.




Specifications

SYMBOL PARAMETERS RATING UNITS
VCBO Collector-Base Voltag 20 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Voltage 1.5 V
IC CONT Collector Current 40 mA
TJ Junction Temperature 200 oC
TSTG Storage Temperatur -65 to 150 oC



Description

Bipolarics' B12V105 is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the B12V105 an excellent choice for battery applications. From 10 mA to greater than 25 mA, ft is nominally 10 GHz. Maximum recommended continuous current is 40 mA. A broad range of packages are offered including SOT-23, SOT 143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice.




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