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B10DCT

Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capability• High frequency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for T...

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SeekIC No. : 004293663 Detail

B10DCT: Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capabilityR...

B10DCT Data Sheet

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Part Number:
B10DCT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, IT-220AB)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


Application

For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes,dc-to-dc converters or polarity protection application.




Specifications

PARAMETER
SYMBOL
U(F,B)10BCT
U(F,B)10CCT
U(F,B)10DCT
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
150
200
 V
Maximum average
forward current
IF(AV)
10
5
 A
Maximum peak one cycle
non-repetitive surge current
IFSM
55
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 k (contact mode)
VC
8
 kV
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min per diode
VAC
1500
 V
Operating junction and storage temperature range
TJ,TSTG
- 55 to + 150



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