B1009-QT

Mimix Broadband's three stage 12.0-27.0 GHz GaAs MMIC buffer amplifier B1009-QT has a small signal gain of 16.0 dB with a +22.0 dBm P1dB output compression point across much of the band. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 3x3mm QFN Surface Mount Package offering excellent RF and thermal properties. This B1009-QT is well suited for Millimeter-wave Point-to-Point Radio, LMDS,SATCOM and VSAT applications.

Features of of the B1009-QT are:(1)excellent transmit LO/output buffer stage; (2)on-chip ESD protection; (3)16.0 dB small signal gain; (4)+22.0 dBm P1dB compression point; (5)RoHS compliant SMD, 3x3 mm QFN package; (6)100% RF, DC, and Output power testing.

The absolute maximum ratings of the B1009-QT can be summarized as:(1): supply voltage (Vd): +6.0 VDC; (2): supply current (Id1,2,3): 90, 260 mA; (3): gate bias voltage (Vg):+0.3 VDC; (4): input power (Pin):+12.0 dBm; (5): storage temperature (Tstg):-65 to +165 OC; (6): operating temperature (Ta):-55 to MTTF Graph1; (7): channel temperature (Tch):MTTF Graph1.The electrical characteritics of the B1009-QTL can be summarized as:(1): frequency range (f ): 12 GHz min,27 GHz max; (2): input return loss (S11): 10 dB typ; (3): output return loss (S22): 10 dB typ; (4): small signal gain (S21): 16 dB typ; (5): gain flatness ( S21): ±3.0 dB; (6): reverse isolation (S12):45 dB typ; (7): noise figure (NF): 5 dB typ; (8): output power for 1dB compression (P1dB): +22 dB typ; (9): drain bias voltage (Vd1,2): +5.0 VDC typ, +5.5 VDC max; (10): gate bias voltage (Vg1,2): -1.0 VCD min, -0.6 VDC typ, 0 VDC max; (11): supply current (Id1) (Vd=5.0V, Vg=-0.6V Typical): 60 mA typ, 75 dB max; (12): supply current (Id2) (Vd=5.0V, Vg=-0.6V Typical): 180 dB typ, 220 dB max.