Features: ·Excellent Transmit LO/Output Buffer Stage·On-Chip ESD Protection·18.0 dB Small Signal Gain·+22.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current ...
B1009-BD: Features: ·Excellent Transmit LO/Output Buffer Stage·On-Chip ESD Protection·18.0 dB Small Signal Gain·+22.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspe...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id1,2) | 110, 340 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +12.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Graph1 |
Channel Temperature (Tch) | MTTF Graph1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's three stage 14.0-30.0 GHz GaAs MMIC buffer amplifier B1009-BD has a small signal gain of 18.0 dB with a +22.0 dBm P1dB output compression point. This MMIC B1009-BD uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This B1009-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.