Features: ·Excellent Transmit LO/Output Buffer Stage·Compact Size·23.0 dB Small Signal Gain·+20.0 dBm P1dB Compression Point·4.5 dB Noise Figure·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Suppl...
B1007-BD: Features: ·Excellent Transmit LO/Output Buffer Stage·Compact Size·23.0 dB Small Signal Gain·+20.0 dBm P1dB Compression Point·4.5 dB Noise Figure·100% On-Wafer RF, DC and Output Power Testing·100% Vi...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id1) |
180 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +20.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Graph1 |
Channel Temperature (Tch) | MTTF Graph1 | <
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's two stage 4.0-11.0 GHz GaAs MIC buffer amplifier B1007-BD has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device B1007-BD is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.