Features: ·High Dynamic Range·Excellent LO Driver/Buffer Amplifier·Low Noise or Power Bias Configurations·23.0 dB Small Signal Gain·2.7 dB Noise Figure at Low Noise Bias·+16 dBm P1dB Compression at Power Bias·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspection to MIL-STD-883 Metho...
B1005-BD: Features: ·High Dynamic Range·Excellent LO Driver/Buffer Amplifier·Low Noise or Power Bias Configurations·23.0 dB Small Signal Gain·2.7 dB Noise Figure at Low Noise Bias·+16 dBm P1dB Compression at ...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) |
180 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +5 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Graph5 |
Channel Temperature (Tch) | MTTF Graph5 |
(5) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier B1004-BD has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device B1004-BD is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.