Features: ·High Dynamic Range·Excellent LO Driver/Buffer Amplifier·Low Noise or Power Bias Configurations·21.0 dB Small Signal Gain·2.2 dB Noise Figure at Low Noise Bias·+19.0 dBm P1dB Compression Point at Power Bias·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspection to MIL-STD-8...
B1004-BD: Features: ·High Dynamic Range·Excellent LO Driver/Buffer Amplifier·Low Noise or Power Bias Configurations·21.0 dB Small Signal Gain·2.2 dB Noise Figure at Low Noise Bias·+19.0 dBm P1dB Compression P...
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Supply Voltage (Vd) | +6.5 VDC |
Supply Current (Id) | 200 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +5 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table5 |
Channel Temperature (Tch) | MTTF Table5 |
Mimix Broadband's three stage 16.0-30.0 GHz GaAs MMIC buffer amplifier B1004-BD has a small signal gain of 21.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device B1004-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.