B06N60

Features:

• Advanced Process Technology
• Ultra low On-Resistance Provides Higher Efficiency
• Avalanche Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS (on) Specified at Elevated Temperature


Pinout




Specifications

Rating	Symbol	Value	Unit
Drain to Current Continuous	ID	6.0	A
Gate-to-Source Voltage Continue - Non-repetitive	VGS VGSM	+/- 20 +/- 40	V V
Total Power Dissipation Derate Above 25	PD	125 1.0	W W/
Operating and Storage Temperature Range	TJ, TSTG	-55 to 150
Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS= 10V, IL =6A, L = 10mH, RG=25)	EAS	180	mJ
Thermal Resistance Junction to Case - Junction to Ambient	JC JA	1.0 62.5	/W
Maximum Led Temperature for Solding Purpose, 1/8" from case for 10 seconds	TL	260

Description

This high voltage MOSFET B06N60 used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET B06N60 is designed to withstand high energy in avalanche and commutation time. Designed for high voltage, high speed switching application in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operation areas critical and offer additional and safety margin against unexpected voltage transients.