B048K030T21

Features:

• 48 V to 3 V V•I Chip Converter
• 210 Watt (315 Watt for 1 ms)
• High density 284 A/in3
• Small footprint 60 A/in2
• Low weight 0.5 oz (14 g)
• ZVS/ZCS isolated sine amplitude converter
• 94% efficiency
• 125°C operation
• <1 s transient response
• 3.5 million hours MTBF
• No output filtering required
• Surface mount BGA or J-Lead packages


Specifications

Parameter	Values	Unit	Notes
+In to -In	-1.0 to 60	Vdc
+In to -In	100	Vdc	For 100 ms
PC to -In	-0.3 to 7.0	Vdc
+Out to -Out	-0.5 to 6.0	Vdc
Isolation voltage	2,250	Vdc	Input to Output
Output current	70	A	Continuous
Peak output current	105	A	For 1 ms
Output power	210	W	Continuous
Peak output power	315	W	For 1 ms
Case temperature	208	°C	During reflow
Operating junction temperature(1)	-40 to 125 -55 to 125	°C	T - Grade M - Grade
		°C
Storage temperature	-40 to 150 -65 to 150	°C	T - Grade M - Grade
		°C

Description

The V•I Chip Bus Converter Module (BCM) B048K030T21 is a high efficiency (>94%), narrow input range Sine Amplitude Converter (SAC) operating from a 38 to 55 Vdc primary bus to deliver an isolated 2.38 V to 3.43 V secondary.The BCM may be used to power non-isolated POL converters or as an independent 2.38 3.43 V source.Due to the fast response time and low noise of the BCM B048K030T21, the need for limited life aluminum electrolytic or tantalum capacitors at the input of POL converters is reduced-or eliminated-resulting in savings of board area, materials and total system cost.

The BCM B048K030T21 achieves a current density of 284 A/in3 and may be surface mounted with a profile as low as 0.16"(4 mm) over the PCB. Its V•I Chip power package is compatible with onboard or inboard surface mounting.The V•I Chip package provides flexible thermal management through its low Junction-to-Case and Junction-to-BGA thermal resistance. Owing to its high conversion efficiency and safe operating temperature range, the BCM does not require a discrete heat sink in typical applications. B048K030T21 is also available with heat sink options, assuring low junction temperatures and long life in the harshest environments.