Am29LV400

Pinout

Specifications

Plastic Packages . . . . . . . . . . . . . . . . .  . 65°C to +150°C
Ambient Temperature
with Power Applied  . . . . . . . . . . . . . .  . 65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1)  . . . . . . . . . . . . .  . .  . .  . .  . .0.5 V to +4.0 V
A9, OE#, and
RESET# (Note 2). . . . . . . . . .  . . .   . . .  . . 0.5 V to +12.5 V
All other pins (Note 1)  . . . . . .  . . .   . . 0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3)  . . . .  . . . .  . .  200 mA


Description

The Am29LV400 is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15DQ0; the byte-wide (x8) data appears on DQ7DQ0. This device is designed to be programmed in-system using only a single 3.0 volt VCC supply. No VPP is required for write or erase opera-tions. The device can also be programmed in standard EPROM programmers.

The standard device offers access times of 90, 100, 120, and 150 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus conten-tion the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Am29LV400 requires only a single 3.0 volt power sup-ply for both read and write functions. Internally gener-ated and regulated voltages are provided for the program and erase operations.