Am29LV160BB80ECB

PinoutSpecificationsStorage TemperaturePlastic Packages . . . . . . . . . . . . . . . .65°C to +150°CAmbient Temperaturewith Power Applied. . . . . . . . . . . . . . 65°C to +125°CVoltage with Respect to GroundVCC(Note 1). . . . . . . . . . . . . . . . . . . . 0.5 V to +4.0 VA9, OE#, and RESET# (N...

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SeekIC No. : 004282351 Detail

Am29LV160BB80ECB: PinoutSpecificationsStorage TemperaturePlastic Packages . . . . . . . . . . . . . . . .65°C to +150°CAmbient Temperaturewith Power Applied. . . . . . . . . . . . . . 65°C to +125°CVoltage with Respe...

floor Price/Ceiling Price

Part Number:
Am29LV160BB80ECB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . .65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . 65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1). . . . . . . . . . . . . . . . . . . . 0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2). . . . . 0.5 V to +12.5 V
All other pins (Note 1). . . . . . . . . . 0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3) . . . . . . . .200 mA
 


Description

The Am29LV160BB80ECB is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15DQ0; the byte-wide (x8) data appears on DQ7DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0VCC are not required for write or erase operations. The device can also be programmed in standard EPROMprogrammers. The device offers access times of 70, 80, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

The Am29LV160BB80ECB is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations.

Reading data out of the device is similar to reading from other Flash or EPROM devices.Hardware data protection measures include a low VCCdetector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The  Erase Suspend/Erase Resume  feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved.

The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. Am29LV160BB80ECB offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes.

AMD's Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. Am29LV160BB80ECB electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.




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