Am29LV128MH

Storage Temperature
Plastic Packages . . . . . . . . . . . . .65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . .65°C to +125°C
Voltage with Respect to Ground
V_CC (Note 1) . . . . . . . . . . . . . . . . 0.5 V to +4.0 V
V_IO . . . . . . . . . . . . . . . . . . . . . . ..0.5 V to +4.0 V
A9, OE#, ACC, and RESET#
(Note 2) . . . . . . . . . . . . . . . . . .  0.5 V to +12.5 V
All other pins (Note 1) . . . .   0.5 V to V_CC +0.5 V
Output Short Circuit Current (Note 3) . . . ..200 mA

Notes:
1. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, input or I/O pins may overshoot V_SS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is V_CC +0.5 V. See Figure 10. During voltage transitions, input or I/O pins may overshoot to V_CC +2.0 V for periods up to 20 ns. See Figure 11.
2. Minimum DC input voltage on pins A9, OE#, ACC, and RESET# is 0.5 V. During voltage transitions, A9, OE#, ACC, and RESET# may overshoot V_SS to 2.0 V for  periods of up to 20 ns. See Figure 10. Maximum DC input voltage on pin A9, OE#, ACC, and RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.

The Am29LV128MH/L is a 128 Mbit, 3.0 volt single power supply flash memory devices organized as 8,388,608 words or 16,777,216 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.

An access time of 90, 100, 110, or 120 ns is available. Note that each access time has a specific operating voltage range (V_CC) and an I/O voltage range (V_IO), as specified in the Product Selector Guide and the Ordering Information sections. Am29LV128MH is offered in a 56-pin TSOP, 64-ball Fortified BGA. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Each device requires only a single 3.0 volt power supply for both read and write functions. In addition to a V_CC input, a high-voltage accelerated program (WP#/ACC) input provides shorter programming times through increased current. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired.

Am29LV128MH is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. Am29LV128MH is fully erased when shipped from the factory.

Device programming and erasure are initiated through command sequences. Once a program or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four.

The VersatileI/O™ (VIO) control allows the host system to set the voltage levels that the device generates