PinoutSpecificationsStorage TemperaturePlastic Packages . . . . . . . . . . .. 55°C to +150°CAmbient Temperaturewith Power Applied . . . . . . . . . 55°C to +125°CVoltage with Respect to GroundVCC (Note 1) . . . . . . . . . . . . . . . . .0.5 V to +4.0 VA9, OE#, and RESET# (Note 2) . . . . . . . ....
Am29LV116M: PinoutSpecificationsStorage TemperaturePlastic Packages . . . . . . . . . . .. 55°C to +150°CAmbient Temperaturewith Power Applied . . . . . . . . . 55°C to +125°CVoltage with Respect to GroundVCC (...
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The Am29LV116M is a 16 Mbit, 3.0 Volt-only Flashmemory organized as 2,097,152 bytes. The device isoffered in a 40-pin TSOP package. The byte-wide (x8)data appears on DQ7DQ0. All read, program, anderase operations are accomplished using only a singlepower supply. The device can also be programmed instandard EPROM programmers.
The standard device offers access times of 70, 90, and120 ns, allowing high speed microprocessors tooperate without wait states. To eliminate bus conten-tion Am29LV116M has separate chip enable (CE#), writeenable (WE#) and output enable (OE#) controls.
The device requires only a single 3.0 volt power sup-ply for both read and write functions. Internally gener-ated and regulated voltages are provided for theprogram and erase operations.
Am29LV116M is entirely command set compatible with theJEDEC single-power-supply Flash standard. Com-mands are written to the command register using stan-dard microprocessor write timings. Register contentsserve as input to an internal state-machine that con-trols the erase and programming circuitry. Write cyclesalso internally latch addresses and data needed for theprogramming and erase operations. Reading data outof the device is similar to reading from other Flash orEPROM devices.