PinoutSpecificationsStorage TemperaturePlastic Packages . . . . . . . . . . . . 65°C to +150°CAmbient Temperaturewith Power Applied. . . . . . . . . . 65°C to +125°CVoltage with Respect to GroundVCC (Note 1) . . . . . . . . . . . . . . . . .0.5 V to +4.0 VA9, OE#, and RESET# (Note 2) . . . . . . ....
Am29LV002B: PinoutSpecificationsStorage TemperaturePlastic Packages . . . . . . . . . . . . 65°C to +150°CAmbient Temperaturewith Power Applied. . . . . . . . . . 65°C to +125°CVoltage with Respect to GroundVCC...
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The Am29LV002B is an 2 Mbit, 3.0 volt-only Flashmemory organized as 262,144 bytes. The device isoffered in a 40-pin TSOP package. The byte-wide (x8)data appears on DQ7DQ0. This device requires only asingle, 3.0 volt VCC supply to perform read, program,and erase operations. A standard EPROM programmercan also be used to program and erase the device.
This device is manufactured using AMD's 0.32 µmprocess technology, and offers all the features and ben-efits of the Am29LV002, which was manufactured using0.5 µm process technology. In addition, theAm29LV002B features unlock bypass programmingand in-system sector protection/unprotection.
The standard device offers access times of 55, 70, 90,and 120 ns, allowing high speed microprocessors tooperate without wait states. To eliminate bus contentionthe device has separate chip enable (CE#), writeenable (WE#) and output enable (OE#) controls.
Am29LV002B requires only a single 3.0 volt powersupply for both read and write functions. Internallygenerated and regulated voltages are provided for theprogram and erase operations.