Am29F080B

PinoutDescriptionThe Am29F080B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes. The 8 bits of data appear on DQ0DQ7. The Am29F080B is offered in40-pin TSOP and 44-pin SO packages. This device i designed to be programmed in-system with the standard system 5.0 volt VCC supply. ...

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SeekIC No. : 004282279 Detail

Am29F080B: PinoutDescriptionThe Am29F080B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes. The 8 bits of data appear on DQ0DQ7. The Am29F080B is offered in40-pin TSOP and 44-pin SO packag...

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Part Number:
Am29F080B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Description

The Am29F080B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes. The 8 bits of data appear on DQ0DQ7. The Am29F080B is offered in40-pin TSOP and 44-pin SO packages. This device i  designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

Am29F080B is manufactured using AMD's 0.35 m process technology, and offers all the features and benefits of the Am29F080, which was manufactured using 0.5 m process technology.

The standard device offers access times of 70, 90, 120,and 150 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention,Am29F080B has separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls.

The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

Am29F080B is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.

Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm-an internal algorithm that automatically times the program pulse widths and verifies proper cell margin.




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