Am29F040B-70ECB

Pinout




Specifications

Storage TemperaturePlastic Packages . . . . . . . . . . . . . . .. 65°C to +125°C
Ambient Temperaturewith Power Applied. . . . . . . . . . . . . . 55°C to +125°C
Voltage with Respect to Ground
    V_CC (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .2.0 V to 7.0 V
    A9, OE# (Note 2). . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . 2.0 V to 12.5 V
    All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.0 V to 7.0 V
Output Short Circuit Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA


Description

The Am29F040B-70ECB is a 4 Mbit, 5.0 volt-only Flash mem-ory organized as 524,288 Kbytes of 8 bits each. The512 Kbytes of data are divided into eight sectors of 64Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0DQ7. The Am29F040B is offered in 32-pin PLCC, TSOP, and PDIP packages. This device is designed to be programmed in-system with thestandard system 5.0 volt V_CC supply. A 12.0 volt VPP isnot required for write or erase operations. The device can also be programmed in standard EPROM pro-grammers.

Am29F040B-70ECB is manufactured using AMD's 0.35 µmprocess technology, and offers all the features and ben-efits of the Am29F040, which was manufactured using 0.5 µm process technology. In addtion, the Am29F040B has a second toggle bit, DQ2, and also offers the ability to program in the Erase Suspend mode.The standard Am29F040B offers access times of 55,70, 90, 120, and 150 ns, allowing high-speed micropro-cessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#),write enable (WE#) and output enable (OE#) controls.

Am29F040B-70ECB requires only a single 5.0 volt power sup-ply for both read and write functions. Internally gener-ated and regulated voltages are provided for the program and erase operations.