Features: Single power supply operation - 5.0 V ± 10% for read, erase, and programoperations - Simplifies system-level power requirements High performance - 45 ns maximum access time Low power consumption - 30 mA max active read current - 50 mA max program/erase current - <25 µA typical ...
Am29F010: Features: Single power supply operation - 5.0 V ± 10% for read, erase, and programoperations - Simplifies system-level power requirements High performance - 45 ns maximum access time Low power cons...
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Single power supply operation
- 5.0 V ± 10% for read, erase, and program
operations
- Simplifies system-level power requirements
High performance
- 45 ns maximum access time
Low power consumption
- 30 mA max active read current
- 50 mA max program/erase current
- <25 µA typical standby current
Flexible sector architecture
- Eight uniform sectors
- Any combination of sectors can be erased
- Supports full chip erase
Sector protection
- Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
- Sector protection/unprotection can be
implemented using standard PROM
programming equipment
Embedded Algorithms
- Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
The Am29F010 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes. The Am29F010 is offered in 32-pin PLCC, TSOP, and PDIP packages. The byte wide data appears on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers. Am29F010 offers access times of 45, 55, 70,90, and 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.