PinoutStorage TemperaturePlastic Packages . . . . . . . . . . . . . . . .65°C to +150°CAmbient Temperaturewith Power Applied. . . . . . . . . . . . . . 65°C to +125°CVoltage with Respect to Ground VCC(Note 1). . . . . . . . . . . . . . . . . .0.5 V to +4.0 VA9, OE#, and RESET# (Note 2). . . . . . ...
Am29DL800B: PinoutStorage TemperaturePlastic Packages . . . . . . . . . . . . . . . .65°C to +150°CAmbient Temperaturewith Power Applied. . . . . . . . . . . . . . 65°C to +125°CVoltage with Respect to Ground V...
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The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO,48-pin TSOP, and 48-ball FBGA packages. The wordwide (x16) data appears on DQ0DQ15; the byte-wide (x8) data appears on DQ0DQ7. This device requires only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.
This device is manufactured using AMD's 0.35 µm process technology, and offers all the features and benefits of the Am29DL800, which was manufactured using a 0.5 µm technology.
Am29DL800B offers access times of 70, 90, and 120 ns, allowing high-speed microprocessors to operate without wait states. Standard control pins-chip enable (CE#), write enable (WE#), and output enable (OE#)-control read and write operations, and avoid bus contention issues.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.