Features: Single 1.8 volt read, program and erase (1.7 to 1.9 volt)Multiplexed Data and Address for reduced I/O count- A0A15 multiplexed as D0D15- Addresses are latched with AVD# control inputs while CE# lowSimultaneous Read/Write operation- Data can be continuously read from one bankwhile executi...
Am29BDS643D: Features: Single 1.8 volt read, program and erase (1.7 to 1.9 volt)Multiplexed Data and Address for reduced I/O count- A0A15 multiplexed as D0D15- Addresses are latched with AVD# control inputs whil...
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The Am29BDS643D is a 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 4,194,304 words of 16 bits each. This device uses a single VCC of 1.7 to 1.9 V to read, program, and erase the memory array. A 12.0-volt VPP may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers.
At 40 MHz, the Am29BDS643D provides a burst access of 20 ns at 30 pF with initial access times of 120 ns at 30 pF. At 54 MHz, the Am29BDS643 provides a burst access of 13.5 ns at 30 pF with initial access times of 106 ns at 30 pF. The device operates within the industrial temperature range of 40°C to +85°C. The device is offered in the 48-ball FBGA package.