Am29BDS640G

The Am29BDS640G is a 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, orga-
nized as 4,194,304 words of 16 bits each. This device uses a single V  of 1.65 to 1.95 V to read, program, and erase
the memory array. The device supports Enhanced V_IO to offer up to 3V compatible inputs and outputs. A 12.0-volt V_ID may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers.
At 54 MHz, Am29BDS640G provides a burst access of 13.5 ns at 30 pF with a latency of 87.5 ns at 30 pF. At 40 MHz, the device provides a burst access of 20 ns at 30 pF with a latency of 95 ns at 30 pF. The device operates within the industrial temperature range of -40°C to +85°C. The device is offered in the 80-ball FBGA package.
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four
banks. Am29BDS640G can improve overall system performance by allowing a host system to program or erase in one bank,then immediately and simultaneously read from another bank, with zero latency. This releases the system from waiting for the completion of program or erase operations.
The device is divided as shown in the following table:

The Enhanced VersatileIO(TM) (V_IO ) control allows the host system to set the voltage levels that Am29BDS640G enerates at its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the V_IO pin.This allows the device to operate in 1.8 V and 3 V system environments as required.
Am29BDS640G uses Chip Enable (CE#), Write Enable (WE#),Address Valid (AVD#) and Output Enable (OE#) to control
asynchronous read and write operations. For burst operations, the device additionally requires Ready (RDY), and
Clock (CLK). This implementation allows easy interface with minimal glue logic to a wide range of microprocessors/microcontrollers for high performance read operations. The burst read mode feature gives system designers flexibility in the interface to the device. The user can preset the burst length and wrap through the same memory space, or read the flash array in continuous mode.