Features: ` Sector Protection- Software command sector locking` Reduced Wait-State Handshaking feature available- Provides host system with minimum possible latency by monitoring RDY` Hardware reset input (RESET#)- Hardware method to reset the device for reading array data` WP# input- Write protec...
Am29BDS320G: Features: ` Sector Protection- Software command sector locking` Reduced Wait-State Handshaking feature available- Provides host system with minimum possible latency by monitoring RDY` Hardware reset...
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The Am29BDS320G is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 2,097,152 words of 16 bits each. This device uses a single VCC of 1.65 to 1.95 V to read, program, and erase the memory array. The device supports Enhanced VIO to offer up to 3V ompatible inputs and outputs. A 12.0-volt VID may be used for faster program performance if desired. Am29BDS320G can also be programmed in standard EPROM programmers.
At 54 MHz, the device provides a burst access of 13.5 ns at 30 pF with a latency of 87.5 ns at 30 pF. At 40 MHz, the device provides a burst access of 20 ns at 30 pF with a latency of 95 ns at 30 pF. The device operates within the industrial temperature range of -40°C to +85°C. The device is offered in the 64-ball FBGA package.
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks. Am29BDS320G can improve overall
system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from another bank, with zero latency. This releases the system from waiting for the completion of program or erase operations.