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AWT921

Features: • High Power Levels• High Efficiency• True Surface Mount Package With Integrated Heat Slug• Internal Bias Circuit Requiring Nominal Input Voltages +10%• Low Cost• Off Chip Output Matching Circuit Allows Application OptimizationApplication• Base S...

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SeekIC No. : 004292295 Detail

AWT921: Features: • High Power Levels• High Efficiency• True Surface Mount Package With Integrated Heat Slug• Internal Bias Circuit Requiring Nominal Input Voltages +10%• Low C...

AWT921 Data Sheet

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Part Number:
AWT921
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• High Power Levels
• High Efficiency
• True Surface Mount Package With Integrated Heat Slug
• Internal Bias Circuit Requiring Nominal Input Voltages +10%
• Low Cost
• Off Chip Output Matching Circuit Allows Application Optimization




Application

• Base Station Driver Amplifier
• u-Cell Base Station Output Stage
• Cellular Booster Amplifier




Pinout

Connection Diagram

Connection Diagram






Specifications

Frequency (MHz) 925 - 960 MHz
Supply (V)
Current (mA)
Gain (dB)
Output P1dB (dBm)
Error Vector Magnitude [EVM]
Package Type SSOP 28 Wide Body


PARAMETER MIN MAX UNIT
VDD 0 +7 VDC
RFIN 0 +20 dBm
1st Stage Supply (VD1) 0 +10 VDC
2nd Stage Supply (VD2) 0 +10 VDC
3rd Stage Voltage (VD3) 0 +10 VDC
Negative Supply (VSS) -7 0 VDC
Reference Voltage (VREF) 0 +7 VDC
Storage Temperature -55 +100 °C
Operating Temperature -30 +85 °C





Description

The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point. This device has been specifically designed for multi carrier and micro cell base station applications.



The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point. This device has been specifically designed for multi-carrier and micro-cell base station applications. This deviceis manufactured on a high power MESFET process and has an on-chip bias circuit that does not require highly regulated positive and negative supplies to establish the proper operating point.






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