Features: FEATURES• InGaP HBT Technology• High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm• Low Quiescent Current: 16 mA• Low Leakage Current in Shutdown Mode: <1 A• VREF = +2.85 V (+2.75 V min over temp)• Optimized for a 50 Sys...
AWT6270: Features: FEATURES• InGaP HBT Technology• High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm• Low Quiescent Current: 16 mA• Low Leakage Current in...
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The AWT6270 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectablebias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.6 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 system.