AWT6252

Features:

• InGaP HBT Technology
• High Efficiency: 39%
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 A
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 System
• Low Profile Miniature Surface Mount Package:1.56mm Max


Application

Dual Mode 3GPP Wireless Handsets


Pinout

Specifications

PARAMETER	MIN	MAX	UNIT
Supply Voltage (VCC)	0	+5	V
Mode Control Voltage (VMODE)	0	+3.5	V
Reference Voltage (VREF)	0	+3.5	V
RF Input Power (PIN)	-	+10	dBm
Storage Temperature (TSTG)	-40	+150	°C

Description

The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset.The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness.The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset.The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness.