AWT6201

AWT6201,the module requires only the most basic RF decoupling, all the RF ports are 50 ohms, and the interfaces directly with the baseband power control DAC and supports both 1.8 V and 2.7 V logic. The solution includes integrated power control, two dual band power amplifiers to support GSM850/900/DCS/PCS,harmonic filtering and RX/TX switching. The power amplifiers support class 12 GPRS, 4 TX slots at 50% duty cycle, using three stage InGap HBT PAs. The pHEMT switches support 4 RX ports to interface with external RX SAW filters and the filtering is achieved using integrated passives technology.It has many unique features: The first one is high gain InGaP HBT PAs. The second one is low loss receive paths. The third one is fully compliant GSM harmonic performance. The forth one is Power control range is larger than 50 dB. The fifth one is integrated power control(CMOS). The sixth one is proven high volume low cost laminate/overmold technology,etc.

There are some AWT6201 electrical charactersitics: Supply voltage(Vcc) is 7 V max. Input power(RFIN) is 11 dBm max. Power control voltage(VRAMP) is 1.8 V max. Storage temperature(Tstg) is -55 to 150. Maximum reflow temperature is 240.Operating conidtions and supply currents:Supply voltage(Vbatt) is 3.0 V min, 3.5 V typ and 4.8 V max. Regulated current is 2.7 V min, 2.85 V typ and 3.0 V max. Regulated current is 7 mA typ and 8 mA max(TX mode enabled). RX current is 0 uA min and 10 uA max (Vbatt is 4.8 V). Control voltage is 0.2 V min and 1.6 V max. VRAMP input capacitance is 15 pF typ and 20 pF max.

All the information above is just a simple introduction to AWT6201, if you are interested in it or want to know more about it, please pay more attention to our web and you can find more detailed information about it!Thanks for your attention!