AWT6137

Features:

• InGaP HBT Technology
• High Efficiency:
              39% @ +28 dBm
              20% @ +16 dBm
• Low Quiescent Current: 15 mA
• Low Leakage Current in Shutdown Mode: <1 A
• V_REF = +2.85 V (+2.7 V Min Over Temp.)
• Low Profile Surface Mount Package: 1.56mm Max
• CDMA 1XRTT and 1xEV-DO Compliant


Application

• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets


Pinout

      


Specifications

PARAMETER	MIN	MAX	UNIT
Supply Voltage (VCC )	0	+5	V
Mode Control Voltage (VMODE)	0	+3.5	V
Reference Voltage (VREF)	0	+3.5	V
RF Input Power (PIN)	-	+10	dBm
Storage Temperature (TSTG)	-40	+150

Description

The AWT6137 CDMA/AMPS Power Amplifier is a high performance CDMA2000/ 1XRTT amplifier designed specifically for Cellular wireless applications. This rugged, easy to use InGaP HBT design delivers state of the art efficiency and temperature stability with very low DC power consumption. The AWT6137 PA module has the lowest CDG currents available to handset manufacturers today.

A combination of low idle current and mode switching enables the AWT6137 to deliver unparalleled CDMA average power efficiencies.This bias feature allows the AWT6137 to significantly increase the battery usage time of a mobile handset. The device has mode-switching to take advantage of its high efficiency operation over a wide range of output powers. Higher low power efficiency is achieved without an external DAC or DC-DC converter. The integrated power amplifier module employs a proprietary bias control and temperature compensation circuit that assures stable operation,even at extreme temperature conditions.

The self contained 4 x 4 x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 system making it easy to incorporate the device into BOTH new and existing designs.