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AWT6112

Features: • InGaP HBT Technology• High Efficiency: 49% AMPS, 38% CDMA• Low Quiescent Current: 50 mA• Low Leakage Current in Shutdown Mode: <5 A• Optimized for a 50 System• Low Profile Miniature Surface Mount Package• CDMA 1XRTT Compliant• CDMA 1x...

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SeekIC No. : 004292253 Detail

AWT6112: Features: • InGaP HBT Technology• High Efficiency: 49% AMPS, 38% CDMA• Low Quiescent Current: 50 mA• Low Leakage Current in Shutdown Mode: <5 A• Optimized for a 50 ...

AWT6112 Data Sheet

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Part Number:
AWT6112
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• InGaP HBT Technology
• High Efficiency: 49% AMPS, 38% CDMA
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <5 A
• Optimized for a 50 System
• Low Profile Miniature Surface Mount Package
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant


Application

• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets


Specifications

PARAMETER MIN MAX UNIT
Supply Voltage (VCC ) 0 +5 V
Mode Control Voltage(VMODE) 0 +3.5 V
Reference Voltage (VREF) 0 +3.5 V
RF Input Power (PIN) - +10 dBm
Storage Temperature (TSTG) -40 +150 °C



Description

The AWT6112 is a high power, high efficiency amplifier module for dual mode AMPS/CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self contained 4mm x 4mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 system.




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