Features: • InGaP HBT Technology• High Efficiency (35% Typ)• Low Leakage Current (5A)• SMT Module Package• Small Foot Print (6mm x 6mm)• Low Profile (1.5mm)• 50 Input and Output Matching• POUT = 28.5 dBm @ Icq= 60mA Typ• No Mode Switching Requ...
AWT6109: Features: • InGaP HBT Technology• High Efficiency (35% Typ)• Low Leakage Current (5A)• SMT Module Package• Small Foot Print (6mm x 6mm)• Low Profile (1.5mm)•...
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PARAMETER | MIN | MAX | UNIT |
Supply Voltage (VCC ) | 0 | +5 | V |
VMOD Voltage (VMOD) | 0 | +3.5 | V |
Reference Voltage (VREF) | 0 | +3.5 | V |
RF Input Power (PIN) | - | +10 | dBm |
Storage Temperature (TSTG) | -40 | +150 | °C |
The AWT6109 is a 3.5 V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Full output power is achieved at a low AWT6109 KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module Data Sheet - Rev 2.2 quiescent current of 60mA, reducing power drain on the system battery. No switching is required between high and low output power levels. The 6mm x 6mm laminate package is self contained, incorporating 50 input and output matching networks optimized for output power, linearity, and efficiency.