Features: • InGaP HBT Technology• High Efficiency (37% Typical)• Low Leakage Current (5A)• SMT Module Package• Small Foot Print (6mm x 6mm)• Low Profile (1.5mm)• 50 Input and Output Matching• Low Quiescent Current (Icq = 63 mA)• Shut Down &...
AWT6106: Features: • InGaP HBT Technology• High Efficiency (37% Typical)• Low Leakage Current (5A)• SMT Module Package• Small Foot Print (6mm x 6mm)• Low Profile (1.5mm)...
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PARAMETER | MIN | MAX | UNIT |
Supply Voltage (VCC ) | 0 | +5 | V |
VMOD Voltage (VMOD) | 0 | +3.5 | V |
Reference Voltage (VREF) | 0 | +3.5 | V |
RF Input Power (PIN) | - | +10 | dBm |
Storage Temperature (TSTG) | -40 | +150 | °C |
The AWT6106 is a 3.5 V (3.0 V to 4.2 V) high power, high efficiency, three stage power amplifier module for Dual Mode CDMA/PCS wireless handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. A low power quiescent current mode is digitally controlled to reduce power drain on the system battery. The 6mm x 6mm laminate package is self contained, incorporating 50 input and output matching networks optimized for output power, linearity, and efficiency.