Features: ` InGaP HBT Technology` High Efficiency 45% AMPS` High Efficiency 35% CDMA` Low Leakage Current (<5A)` SMT Module Package` Small Foot Print (6mm x 6mm)` Low Profile (1.5mm)` 50 W Input and Output Matching` Low Quiescent Current (Icq = 50mA Typ)` Shut Down and Mode Control` CDMA 2000 1...
AWT6105: Features: ` InGaP HBT Technology` High Efficiency 45% AMPS` High Efficiency 35% CDMA` Low Leakage Current (<5A)` SMT Module Package` Small Foot Print (6mm x 6mm)` Low Profile (1.5mm)` 50 W Input ...
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PARAMETER | MIN | MAX | UNIT |
Supply Voltage (VCC ) | +5 | V | |
VMOD Voltage (VMOD) | +3.5 | V | |
Control Voltage (VREF) | +3.5 | V | |
Input Power (RFIN) | +10 | dBm | |
Operating Temperature (TC) | -30 | 110 | °C |
Storage Temperature (TSTG) | -40 | 150 | °C |
The AWT6105 is a high power, high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power quiescent current mode is digitally controlled to reduce power drain on the system battery. The 6mm x 6mm laminate package is self contained, incorporating 50W input and output matching networks optimized for output power, linearity, and efficiency.