Features: * Glass passivated chip* High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Ideal for printed circuit boardSpecifications RATING SYMBOL AW005G AW01G AW02G AW04G AW06G AW08G AW10G UNIT Maximum Rec...
AW008G: Features: * Glass passivated chip* High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Ideal for printed circuit boardSpeci...
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Features: T/R SwitchHigh Isolation (30 dB @ 0.9 GHz)Designed for Mobile Radio ApplicationsP-1 dB 1...
RATING | SYMBOL | AW 005G |
AW 01G |
AW 02G |
AW 04G |
AW 06G |
AW 08G |
AW 10G |
UNIT |
Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum RMS Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | Volts |
Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Minimum Avalanche Breakdown Voltage at 100 A | VBO(min.) | 100 | 150 | 250 | 450 | 700 | 900 | 1100 | Volts |
Maximum Avalanche Breakdown Voltage at 100 A | VBO(max.) | 550 | 600 | 700 | 900 | 1150 | 1350 | 1550 | Volts |
Maximum Average Forward Current 0.375" (9.5 mm) lead length Tc = 25°C |
IF(AV) | 1.5 | Amps. | ||||||
Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) |
IFSM | 50 | Amps. | ||||||
Rating for fusing ( t < 8.3 ms. ) | I2t | 10 | A2S | ||||||
Maximum Forward Voltage per Diode at IF = 1.0 Amp. | VF | 1.0 | Volts | ||||||
Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C |
IR | 10 | A | ||||||
IR(H | 1.0 | mA | |||||||
Typical Junction Capacitance per Diode (Note 1) | CJ | 24 | pf | ||||||
Typical Thermal Resistance (Note 2) | RqJA | 36 | °C/W | ||||||
Operating Junction Temperature Range | TJ | - 50 to + 150 | °C | ||||||
Storage Temperature Range | TSTG | - 50 to + 150 | °C |